Field-effect Self-mixing Terahertz Detectors

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The thesis introduces a groundbreaking device model that integrates the spatial distribution of terahertz fields with the field-effect self-mixing factor. It highlights the crucial role of a localized terahertz field within a gated electron channel in achieving high responsivity. The research features the development of an AlGaN/GaN-based high-electron-mobility transistor with a 2-micron gate, achieving remarkable noise-equivalent power levels. Detailed experimental techniques and device simulations are presented, offering insights into self-mixing mechanisms and advancing high-sensitivity terahertz detectors for practical use.