Dynamics of electron and nuclear spin interaction in laser assisted nuclear magnetic resonance spectroscopy of gallium arsenide nanostructures

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Gallium arsenide (GaAs), a group III/V semiconductor, plays a crucial role in modern technology with diverse applications, including light-emitting diodes, laser diodes, sensors, and detectors. It complements silicon in electronics, being utilized for robust logic circuitry, transistors, and microwave waveguides. Additionally, GaAs serves as a photovoltaic power source. The ongoing advancement in technology has sparked significant scientific interest in analyzing material properties and developing new experimental techniques. A prominent research area focuses on semiconductor-based devices for spintronics, quantum computation, and quantum memories, driven by the dynamics of nuclear spin systems in solid-state devices. GaAs is frequently employed in nanoscale assemblies, known as heterostructures, which exhibit unique properties and enable the construction of devices with distinct characteristics compared to bulk materials. At the nanometer scale, quantum effects significantly influence electronic and optical properties. In material analysis, nuclear magnetic resonance (NMR) techniques are commonly used, though classical NMR can be challenging for detecting small nuclear spin sub-ensembles in nanostructures. Optical methods can enhance sensitivity, and laser-assisted NMR techniques, including optically polarized and optically detected NMR, utilize coherent light to polarize the electron spin system, facilitating the polarizatio