Modelling of leakage currents induced by extended defects in extra-functionality devices

Topic of the presented thesis is the development of a Deep Level Transient Spectroscopy (DLTS) simulator combining the convenient state-of-the-art computation of electrostatics in devices with the flexibility of a completely independent C++ - code, to validate and test the implications of different models for the capture and emission of electrans and holes to a defect state. Conclusions about the electrical nature of defects obtained fram the comparison of DLTS simulations and measurements can subsequently be used to refine the simulation of leakage currents.